High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide
نویسندگان
چکیده
منابع مشابه
Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films.
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A. Sciambi,1,2 M. Pelliccione,1,2 M. P. Lilly,3 S. R. Bank,4,5 A. C. Gossard,4 L. N. Pfeiffer,6 K. W. West,6 and D. Goldhaber-Gordon2,7,* 1Department of Applied Physics, Stanford University, Stanford, California 94305-4045, USA 2SIMES, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA 3Center for Integrated Nanotechnologies, Sandia National Laboratorie...
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ژورنال
عنوان ژورنال: ACS Nano
سال: 2014
ISSN: 1936-0851,1936-086X
DOI: 10.1021/nn505253p